WEB Novel air stable single source precursor for homogeneous crystalline TiS2 thin filmsSaturday (25.07.2020) 15:30 - 15:30 Poster Room Part of:
Layered 2D van der Waals materials like TiS2 apply an increase of renewable energy storage and conversion applications due to their outstanding electrical properties, its high stability and low cost. It has a layer depending band gap of 0.2-2.0 eV, which enables the application as electrode material in nearly all solid Li batteries resulting from the high possibility of Li ion intercalation.
Herein, we present a molecular approach to TiS2 thin films by metal organic chemical vapour deposition (MOCVD) using the synthesised (air)stable molecular precursor Ti(SEtN(Me)EtS)2. Designed monomeric molecular precursors with preformed metal chalcogen bond enable an efficient approach to phase pure TiS2. The metal center is distorted octahedral coordinated by two nitrogen and four sulphur atoms, which shield the Ti+iV center from oxidation. The synthesised complex was characterized by NMR, X-ray and mass spectroscopy analysis. A clear and stochiometric decomposition of this precursor was demonstrated and resulting crystalline films were characterized by SEM. XRD, AFM and XPS measurements.